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Hierarchical Measurement Model of Semiconductor Silicon Carbide Epilayer Thickness Based on Infrared Interferometry

Bowen Ye
Vol. 5, No. 2, pp. 1-5, 2025 DOI: 10.54097/382ns292 December 16, 2025
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Abstract.This paper proposes a hierarchical measurement model for silicon carbide (SiC) epilayer thickness based on infrared interferometry. Under a dual-beam interference framework, an analytical relationship between thickness and fringe spacing is established by integrating the Sellmeier dispersion model, resolving systematic errors caused by the constant refractive index assumption. For measured spectra, a five-step inversion algorithm is designed: Savitzky-Golay filtering suppresses noise, while robust spacing statistics combined with significant peak identification enable high-precision SiC thickness inversion at 10° and 15° incidence angles. Furthermore, four necessary conditions for multi-beam interference are derived, confirming significant Fabry-Pérot effects in silicon samples (Attachments 3–4). An Airy-function-based full-spectrum nonlinear fitting correction strategy is proposed, compressing systematic deviations from 5.2% to 1.5%. Experiments show: SiC measurements exhibit a coefficient of variation (CV) of 6.1% with multi-angle consistency δ < 10%; corrected silicon thickness is 6.6 μm; interference fringe spacing inversely correlates with thickness.
Keywords. Hierarchical Measurement Model Epilayer Thickness Infrared Interferometry Five-step inversion algorithm Airy-function
APA Citation Bowen Ye (2025). Hierarchical Measurement Model of Semiconductor Silicon Carbide Epilayer Thickness Based on Infrared Interferometry. Journal of Computer Science and Artificial Intelligence, 5(2), 1-5. https://doi.org/10.54097/382ns292

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